Researchers at the Norwegian University of Science and Technology (NTNU) have patented and are commercializing a method by which gallium arsenide (GaAs) nanowires are grown on graphene.
The method, which was described and published in the journal Nano Letters (“Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth”), employs Molecular Beam Epitaxy (MBE) to grow the GaAs nanowires layer by layer. A video describing the process can be seen below. [read more..]
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