Combined Optical Techniques Probe Graphene Semiconductors

If graphene is to beat out rivals like molybdenum disulfide in the race to become the foundation the next generation of integrated circuits, determining its band-gap potentials is crucial. That fundamental information had not been available until researchers at the National Institutes of Standards and Technology (NIST) yoked two optical measurement techniques into a non-destructive method that provides the first complete picture of a graphene-insulator-semiconductor (GIS) device. [read more..]