If graphene is to beat out rivals like molybdenum disulfide in the race to become the foundation the next generation of integrated circuits, determining its band-gap potentials is crucial. That fundamental information had not been available until researchers at the National Institutes of Standards and Technology (NIST) yoked two optical measurement techniques into a non-destructive method that provides the first complete picture of a graphene-insulator-semiconductor (GIS) device. [read more..]